SPP80N08S2L-07 Infineon Technologies, SPP80N08S2L-07 Datasheet - Page 6

• Manufacturer Part Number: SPP80N08S2L-07
• Description: MOSFET N-CH 75V 80A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPP80N08S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 233nC @ 10V
• Input Capacitance (ciss) @ Vds: 6820pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012476; SPP80N08S2L07

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
pF
10
10
10
10
28
24
22
20
18
16
14
12
10
8
6
4
2
0
-60
5
4
3
2
0
SPP80N08S2L-07
= f (T
DS
)
-20
D
j
5
GS
)
= 67 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
C
C
C
= 10 V
iss
oss
rss
100
20
140 °C
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
2.5
1.5
0.5
V
A
1
0
-60
3
2
1
0
0
= f (T j )
SD
SPP80N08S2L-07
)
0.4
-20
GS
0.8
p
= V
250µA
= 80 µs
20
DS
1.2
T
T
T
T
j
j
j
j
SPB80N08S2L-07
SPP80N08S2L-07
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
100
2
1.25mA
2003-05-09
2.4
°C
T
V
V
j
SD
180
3