IPB085N06L G Infineon Technologies, IPB085N06L G Datasheet - Page 4
![MOSFET N-CH 60V 80A TO-263](/photos/5/62/56246/ipb085n06l_g_sml.jpg)
IPB085N06L G
Manufacturer Part Number
IPB085N06L G
Description
MOSFET N-CH 60V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB085N06L_G.pdf
(10 pages)
Specifications of IPB085N06L G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 80A.10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 125µA
Gate Charge (qg) @ Vgs
104nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 30V
Power - Max
188W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
188 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB085N06LGINCT
1 Power dissipation
P
3 Safe operating area
I
V
200
180
160
140
120
100
10
10
10
10
10
80
60
40
20
T
0
-1
3
2
1
0
10
0
-1
T
t
50
D
10
0
T
V
C
DS
100
[°C]
[V]
10
1
150
200
10
2
2 Drain current
I
4 Max. transient thermal impedance
Z
T
10
10
10
90
80
70
60
50
40
30
20
10
0
-1
-2
t
0
10
0
V
-5
D t T
10
IPB085N06L G
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPP085N06L G
150
10
-1
200
10
0