IPB085N06L G Infineon Technologies, IPB085N06L G Datasheet - Page 6
![MOSFET N-CH 60V 80A TO-263](/photos/5/62/56246/ipb085n06l_g_sml.jpg)
IPB085N06L G
Manufacturer Part Number
IPB085N06L G
Description
MOSFET N-CH 60V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB085N06L_G.pdf
(10 pages)
Specifications of IPB085N06L G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 80A.10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 125µA
Gate Charge (qg) @ Vgs
104nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 30V
Power - Max
188W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
188 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB085N06LGINCT
9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
25
20
15
10
5
0
4
3
2
1
-60
0
T
V
I
-20
10
f
20
V
20
V
T
DS
j
60
[°C]
[V]
30
100
40
140
180
50
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
10
2.5
1.5
0.5
10
10
10
10
3
2
1
0
-1
3
2
1
0
-60
0
T
I
T
V
-20
IPB085N06L G
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
100
IPP085N06L G
1.5
140
180
2