IPD12CNE8N G Infineon Technologies, IPD12CNE8N G Datasheet
IPD12CNE8N G
Manufacturer Part Number
IPD12CNE8N G
Description
MOSFET N-CH 85V 67A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB12CNE8N_G.pdf
(12 pages)
Specifications of IPD12CNE8N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.4 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 40V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000096477
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