IPD12CNE8N G Infineon Technologies, IPD12CNE8N G Datasheet - Page 11

Manufacturer Part Number

IPD12CNE8N G

Description

MOSFET N-CH 85V 67A TO252-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPB12CNE8N_G.pdf (12 pages)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

12.4 mOhm @ 67A, 10V

Drain To Source Voltage (vdss)

85V

Current - Continuous Drain (id) @ 25° C

67A

Vgs(th) (max) @ Id

4V @ 83µA

Gate Charge (qg) @ Vgs

64nC @ 10V

Input Capacitance (ciss) @ Vds

4340pF @ 40V

Power - Max

125W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SP000096477