IPD25CNE8N G Infineon Technologies, IPD25CNE8N G Datasheet - Page 6

• Manufacturer Part Number: IPD25CNE8N G
• Description: MOSFET N-CH 85V 35A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 39µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 2070pF @ 40V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000096457

Rev. 1.07
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
60
40
20
10
10
10
10
10
0
DS
=f(T
-60
4
3
2
1
0
); V
0
j
); I
GS
-20
D
=0 V; f =1 MHz
=35 A; V
20
20
Crss
Coss
Ciss
98 %
GS
T
V
=10 V
j
DS
60
[°C]
40
[V]
typ
100
60
140
180
page 6
80
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
3.5
2.5
1.5
0.5
100
=f(T
SD
4
3
2
1
0
10
-60
1
)
0
j
); V
D
j
GS
-20
IPB26CNE8N G IPD25CNE8N G
=V
0.5
DS
20
39 µA
175 °C
0
T
V
j
SD
60
[°C]
1
[V]
390 µA
25 °C, 98%
100
25 °C
1.5
140
175 °C, 98%
2010-04-28
180
2