BG 3130R E6327 Infineon Technologies, BG 3130R E6327 Datasheet - Page 6

• Manufacturer Part Number: BG 3130R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 3130R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3130RE6327XT; SP000014450

Crossmodulation V
V
Crossmodulation test circuit
DS
dBµV
120
100
= 5 V, R
90
80
0
g1
10
= 68 kΩ
20
unw
50 Ohm
R
= (AGC)
GEN
30
50 Ohm
dB
10 kOhm
4n7
4n7
R1
AGC
V
AGC
V
50
GG
RG1
6
2.2 µH
V
DS
4n7
4n7
50 Ohm
RL
BG3130...
2005-11-03