BG 3130R E6327 Infineon Technologies, BG 3130R E6327 Datasheet - Page 7

• Manufacturer Part Number: BG 3130R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 3130R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3130RE6327XT; SP000014450

Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Laser
marking
Pin 1
marking
Pin 1
marking
0.65
1
6
0.2
Manufacturer
Date code (Year/Month)
Type code
2
±0.2
+0.1
-0.05
P
0.65
5
2
ackage SOT363
0.65
4
3
2.15
6x
0.3
4
0.1
M
0.65
7
Pin 1
marking
0.1 MAX.
0.2
0.1
Example
M
A
0.2
0.9
0.15
1.1
±0.1
+0.1
-0.05
A
2005, June
BCR108S
BG3130...
2005-11-03