BG 3430R E6327 Infineon Technologies, BG 3430R E6327 Datasheet - Page 4

• Manufacturer Part Number: BG 3430R E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3430R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000240529

Electrical Characteristics at T
Parameter
AC Characteristics V
Forward transconductance
Gate1 input capacitance
f = 10 MHz
Output capacitance
f = 10 MHz
Power gain
f = 800 MHz
f = 45 MHz
Noise figure
f = 800 MHz
f = 45 MHz
Gain control range
V
Cross
AGC = 0 dB
AGC = 10 dB
AGC = 40 dB
G2S
= 4 ... 0 V , f = 800 MHz
-
modulation k=1%, f
DS
= 5V, V
w
=50MHz, f
A
G2S
= 25°C, unless otherwise specified
unw
= 4V, (I
=60MHz
D
= 14 mA) (verified by random sampling)
4
Symbol
g
C
C
G
F
∆G
X
fs
mod
g1ss
dss
p
p
min.
45
90
-
-
-
-
-
-
-
-
-
Values
105
typ.
1.9
1.3
1.3
33
25
33
93
1
-
-
max.
BG3430R
2009-10-01
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
-