BG 3430R E6327 Infineon Technologies, BG 3430R E6327 Datasheet - Page 7

• Manufacturer Part Number: BG 3430R E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3430R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000240529

Gate 1 forward transconductance
g
amp. A = amp. B
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
= ƒ(I
mS
mA
= 5V, V
40
30
25
20
15
10
14
10
5
0
8
6
4
2
0
0
0
D
), V
4
G2S
DS
8
1
D
= 5V, V
= 4V, R
12
= ƒ(V
16
2
2V
GG
20
G2S
G1
) amp.A
2.5V
24
= 100kΩ
3
= Parameter
28
32 mA
V
3V
3.5V
I
V
D
4V
d
40
5
7
Drain current I
V
amp. A = amp. B
Drain current I
V
amp. A
DS
G2S
mA
mA
= 5V, V
30
24
22
20
18
16
14
12
10
22
18
16
14
12
10
= 4V, R
8
6
4
2
0
8
6
4
2
0
0
0
0.2
1
G2S
G1
0.4
D
D
= Parameter
= Parameter in kΩ
2
= ƒ(V
= ƒ(V
0.6
0.8
3
GG
G1S
)
1
4
)
1.2
5
BG3430R
2009-10-01
1.4
V
V
V
V
80K
100K
120K
150K
g1
d
4V
3V
2.5V
2V
1.5V
1.8
7