BG 5130R E6327 Infineon Technologies, BG 5130R E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 5130R E6327
• Description: MOSFET N-CH DUAL 8V SOT-363R
• Manufacturer: Infineon Technologies

Specifications of BG 5130R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 10mA
• Voltage - Test: 3V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 35@3VdB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.041S
• Input Capacitance (typ)@vds: 2.7@3V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BG5130RE6327XT; SP000101237

Gate 1 forward transconductance
g
V
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
DS
=
mS
mA
= 3V, V
= 3V, V
60
50
45
40
35
30
25
20
15
10
14
10
5
0
8
6
4
2
0
0
0
(I
D
)
G2S
G2S
5
D
= Parameter
= 3V, R
1.5V
=
10
1
(V
GG
15
G1
)
= 68k
V
20
2V
mA
I
V
D
3V
GG
2.5V
30
3
5
Drain current I
V
V
Drain current I
V
R
DS
G2S
G2S
G1
mA
mA
= 3V
= Parameter in k
28
24
22
20
18
16
14
12
10
28
20
16
12
= Parameter
= 3V
8
6
4
2
0
8
4
0
0
0
0.2
1
0.4
D
D
=
= (V
0.6
2
(V
0.8
GG
G1S
)
1
)
3
1.2
BG5130R
2006-04-13
1.4
3V
V
47K
56K
68K
82K
100K
1V
V
V
V
2.5V
2V
1.5V
GG
G1S
=V
1.8
5
DS