BFP 520F E6327 Infineon Technologies, BFP 520F E6327 Datasheet - Page 2
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BFP 520F E6327
Manufacturer Part Number
BFP 520F E6327
Description
TRANSISTOR RF NPN 2.5V TSFP-4
Manufacturer
Infineon Technologies
Datasheet
1.BFP_520F_E6327.pdf
(6 pages)
Specifications of BFP 520F E6327
Package / Case
TSFP-4
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.95dB @ 1.8GHz
Gain
22.5dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
70 @ 20mA @ 2V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
45000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
2.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.04 A
Power Dissipation
100 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 520F E6327
BFP520FE6327INTR
BFP520FE6327XT
SP000012987
BFP520FE6327INTR
BFP520FE6327XT
SP000012987
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 1 V, I
= 10 V, V
= 5 V, I
B
C
E
= 0
= 0
= 0
CE
BE
thJA
= 2 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
2.5
70
-
-
-
Values
Value
110
typ.
430
3
-
-
-
max.
2007-03-30
200
3.5
170
10
35
BFP520F
Unit
V
µA
mA
µA
-
Unit
K/W