BFP 520F E6327 Infineon Technologies, BFP 520F E6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 520F E6327
• Description: TRANSISTOR RF NPN 2.5V TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 520F E6327

• Package / Case: TSFP-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (db Typ @ F): 0.95dB @ 1.8GHz
• Gain: 22.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 70 @ 20mA @ 2V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 45000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 2.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.04 A
• Power Dissipation: 100 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 520F E6327; BFP520FE6327INTR; BFP520FE6327XT; SP000012987

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
1.4
Package TSFP-4
4
1
±0.05
Pin 1
1.55
0.5
3
4
±0.05
0.5
2
0.2
0.2
0.5
±0.05
±0.05
0.35
±0.05
5
0.5
0.7
0.2
0.55
Manufacturer
BFP420F
Type code
0.15
±0.04
±0.05
2007-03-30
BFP520F