MMBTH81 Fairchild Semiconductor, MMBTH81 Datasheet - Page 2
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MMBTH81
Manufacturer Part Number
MMBTH81
Description
TRANSISTOR RF PNP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH81.pdf
(11 pages)
Specifications of MMBTH81
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
600MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Maximum Operating Frequency
600 MHz (Min)
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 @ 5mA @ 10V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number Of Elements
1
Collector-emitter Voltage
20V
Collector-base Voltage
20V
Emitter-base Voltage
3V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
60
Frequency (max)
600MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTH81TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTH81
Manufacturer:
FAIRCHILD
Quantity:
150 000
Company:
Part Number:
MMBTH81
Manufacturer:
FSC
Quantity:
3 609
Part Number:
MMBTH81
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
C
Symbol
CBO
EBO
T
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
ce
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Spice Model
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Typical Characteristics
on
sat
200
180
160
140
120
100
80
60
40
20
)
-
)
0
0.1
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Collector Emitter Capcitance
I - COLLECTOR CURRENT (mA)
DC Current Gain vs
C
Collector Current
-
1
T = 55°C
Parameter
T = 25°C
A
A
T = 125°C
-
A
-
10
V
CE
TA = 25°C unless otherwise noted
= 1.0V
-
100
I
I
I
V
V
I
I
I
I
f = 100 MHz
V
V
C
C
E
C
C
C
C
CB
EB
CB
CB
= 1.0 mA, I
= 10 A, I
= 10 A, I
= 5.0 mA, V
= 5.0 mA, I
= 5.0 mA, V
= 5.0 mA, V
= 10 V, I
= 2.0 V, I
= 10 V, I
= 10 V, I
Test Conditions
-
E
C
-
-
E
E
B
-
0.05
0.02
0.01
-
B
C
B
-
= 0
= 0
0.5
0.2
0.1
CE
CE
CE
= 0, f = 1.0 MHz
= 0, f = 1.0 MHz
-
= 0
= 0
= 0.5 mA
-
= 0
1
0.1
= 10 V
= 10 V
= 10 V,
Collector Saturation Voltage
vs Collector Current
I - COLLECTO R CURRENT ( mA)
C
T = 25°C
A
-
1
T = 55°C
A
Min
-
600
PNP RF Transistor
3.0
20
20
60
T = 125°C
A
-
10
Max
0.85
0.65
100
100
0.5
0.9
I
C
= 10 I
(continued)
-
B
100
Units
MHz
nA
nA
pF
pF
V
V
V
V
V
3