MMBTH81 Fairchild Semiconductor, MMBTH81 Datasheet - Page 3
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MMBTH81
Manufacturer Part Number
MMBTH81
Description
TRANSISTOR RF PNP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH81.pdf
(11 pages)
Specifications of MMBTH81
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
600MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Maximum Operating Frequency
600 MHz (Min)
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 @ 5mA @ 10V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number Of Elements
1
Collector-emitter Voltage
20V
Collector-base Voltage
20V
Emitter-base Voltage
3V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
60
Frequency (max)
600MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTH81TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTH81
Manufacturer:
FAIRCHILD
Quantity:
150 000
Company:
Part Number:
MMBTH81
Manufacturer:
FSC
Quantity:
3 609
Part Number:
MMBTH81
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
0.01
-14
-12
-10
-1.6
-1.4
-1.2
-0.8
-0.6
-0.4
100
0.1
-8
-6
-4
-2
-
- 1
10
0
-
0.1
1
0.1
25
200 MHz
I
Contours of Constant Gain
Voltage vs Collector Current
C
Collector Reverse Current
= 10 I
Bandwidth Product (f )
vs Ambient Temperature
Base-Emitter Saturation
I - COLLECTOR CURRENT (mA)
T - AMBIENT TEMPE RATURE ( C)
C
I - COLLECTOR CURRENT (mA)
50
A
C
V
B
CE
500 MHz
= -6.0V
-
-
1
1
T = 55 ° C
T = 125 ° C
75
A
A
V
-
CE
900 MHz
= -3.0V
100
-
-
10
10
500 MHz
200 MHz
T = 25 ° C
1200 MHz
(continued)
1500 MHz
A
T
125
°
-
-
100
100
150
0.8
0.6
0.4
0.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
350
300
250
200
150
100
-
1
0
50
3
2
1
0.1
0
0
0
V
CE
Input / Output Capacitance
= 10V
SOT-23
Base-Emitter ON Voltage
vs Reverse Bias Voltage
Ambient Temperature
Power Dissipation vs
25
vs Collector Current
I - COLLECTOR CURRENT (mA)
-2
C
REVERSE BIAS VOLTAGE (V)
T = 25°C
A
-
TEMPERATURE ( C)
1
50
T = 100°C
A
A
C
-4
ibo
PNP RF Transistor
TO-92
75
-6
-
10
100
°
f = 1.0 MHz
C
-8
obo
125
(continued)
-
100
-10
150