BF 770A E6327 Infineon Technologies, BF 770A E6327 Datasheet - Page 2

• Manufacturer Part Number: BF 770A E6327
• Description: TRANSISTOR RF NPN 12V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 770A E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
• Gain: 9.5dB ~ 14.5dB
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 6 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF770AE6327XT; SP000010965

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 2 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
Values
typ.
100
-
-
-
-
max.
100
100
140
10
2007-04-20
-
BF770A
Unit
V
µA
nA
µA
-