BF 770A E6327 Infineon Technologies, BF 770A E6327 Datasheet - Page 3

• Manufacturer Part Number: BF 770A E6327
• Description: TRANSISTOR RF NPN 12V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 770A E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
• Gain: 9.5dB ~ 14.5dB
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 6 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF770AE6327XT; SP000010965

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
1
C
C
C
C
G
CB
CE
EB
ma
= 30 mA, V
= 5 mA, V
= 30 mA, V
= 30 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= |S
21
/S
12
CE
CE
CE
CE
| (k-(k
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
2
-1)
1/2
S
)
BE
BE
S
S
CB
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt,
L
A
= 50 ,
1)
,
= 25°C, unless otherwise specified
Z
L
= Z
Lopt
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
4.5
-
-
-
-
-
-
-
-
-
Values
14.5
12.5
0.54
0.25
typ.
1.9
1.5
2.6
9.5
6
7
max.
0.75
2007-04-20
-
-
-
-
-
-
-
-
-
BF770A
Unit
GHz
pF
dB
dB