BF 770A E6327 Infineon Technologies, BF 770A E6327 Datasheet - Page 3
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BF 770A E6327
Manufacturer Part Number
BF 770A E6327
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BF_770A_E6327.pdf
(5 pages)
Specifications of BF 770A E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain
9.5dB ~ 14.5dB
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
90mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
6 GHz
Collector- Emitter Voltage Vceo Max
12 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF770AE6327XT
SP000010965
SP000010965
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
1
C
C
C
C
G
CB
CE
EB
ma
= 30 mA, V
= 5 mA, V
= 30 mA, V
= 30 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= |S
21
/S
12
CE
CE
CE
CE
| (k-(k
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
2
-1)
1/2
S
)
BE
BE
S
S
CB
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt,
L
A
= 50 ,
1)
,
= 25°C, unless otherwise specified
Z
L
= Z
Lopt
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
4.5
-
-
-
-
-
-
-
-
-
Values
14.5
12.5
0.54
0.25
typ.
1.9
1.5
2.6
9.5
6
7
max.
0.75
2007-04-20
-
-
-
-
-
-
-
-
-
BF770A
Unit
GHz
pF
dB
dB