BF 776 H6327 Infineon Technologies, BF 776 H6327 Datasheet - Page 2
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BF 776 H6327
Manufacturer Part Number
BF 776 H6327
Description
TRANS RF NPN 1.8GHZ 4.0V SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BF_776_E6327.pdf
(6 pages)
Specifications of BF 776 H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.7V
Frequency - Transition
46GHz
Noise Figure (db Typ @ F)
0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain
24dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 30mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 0.5 V, I
= 5 V, V
= 5 V, I
B
E
BE
= 0
C
= 0
CE
= 0
= 0
= 3 V, pulse measured
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
4
-
-
-
-
Values
typ.
180
4.7
10
1
1
max.
2010-04-06
-
-
-
-
-
BF776
Unit
V
nA
-