BFS 466L6 E6327 Infineon Technologies, BFS 466L6 E6327 Datasheet - Page 4
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BFS 466L6 E6327
Manufacturer Part Number
BFS 466L6 E6327
Description
TRANSISTOR RF TWIN NPN TSLP-6
Manufacturer
Infineon Technologies
Datasheet
1.BFS_466L6_E6327.pdf
(8 pages)
Specifications of BFS 466L6 E6327
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5V, 9V
Frequency - Transition
22GHz, 14GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain
12dB ~ 17dB
Power - Max
200mW, 210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (ic) (max)
50mA, 35mA
Mounting Type
Surface Mount
Package / Case
TSLP-6-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS466L6E6327XT
SP000014240
SP000014240
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
TR1, I
TR2, I
Collector-emitter cutoff current
TR1, V
TR2, V
Collector-base cutoff current
TR1, V
TR2, V
Emitter-base cutoff current
TR1, V
TR2, V
DC current gain
TR1, I
TR2, I
C
C
C
C
CE
CE
CB
CB
EB
EB
= 1 mA, I
= 1 mA, I
= 20 mA, V
= 15 mA, V
= 0,5 V, I
= 1 V, I
= 15 V, V
= 15 V, V
= 5 V, I
= 5 V, I
B
B
E
E
C
= 0
= 0
= 0
= 0
C
= 0
CE
CE
BE
BE
= 0
= 3 V, Pulse measured
= 3 V, Pulse measured
= 0
= 0
A
= 25°C, unless otherwise specified
4
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
4.5
90
90
6
-
-
-
-
-
-
Values
120
120
typ.
5
9
-
-
-
-
-
-
max.
100
100
160
160
BFS466L6
10
10
1
1
2007-04-26
-
-
Unit
V
µA
nA
µA
-