BFS 466L6 E6327 Infineon Technologies, BFS 466L6 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFS 466L6 E6327
• Description: TRANSISTOR RF TWIN NPN TSLP-6
• Manufacturer: Infineon Technologies

Specifications of BFS 466L6 E6327

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 5V, 9V
• Frequency - Transition: 22GHz, 14GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
• Gain: 12dB ~ 17dB
• Power - Max: 200mW, 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
• Current - Collector (ic) (max): 50mA, 35mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-6-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFS466L6E6327XT; SP000014240

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
TR1, I
TR2, I
Collector-emitter cutoff current
TR1, V
TR2, V
Collector-base cutoff current
TR1, V
TR2, V
Emitter-base cutoff current
TR1, V
TR2, V
DC current gain
TR1, I
TR2, I
C
C
C
C
CE
CE
CB
CB
EB
EB
= 1 mA, I
= 1 mA, I
= 20 mA, V
= 15 mA, V
= 0,5 V, I
= 1 V, I
= 15 V, V
= 15 V, V
= 5 V, I
= 5 V, I
B
B
E
E
C
= 0
= 0
= 0
= 0
C
= 0
CE
CE
BE
BE
= 0
= 3 V, Pulse measured
= 3 V, Pulse measured
= 0
= 0
A
= 25°C, unless otherwise specified
4
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
4.5
90
90
6
-
-
-
-
-
-
Values
120
120
typ.
5
9
-
-
-
-
-
-
max.
100
100
160
160
BFS466L6
10
10
1
1
2007-04-26
-
-
Unit
V
µA
nA
µA
-