BFS 466L6 E6327 Infineon Technologies, BFS 466L6 E6327 Datasheet - Page 5
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BFS 466L6 E6327
Manufacturer Part Number
BFS 466L6 E6327
Description
TRANSISTOR RF TWIN NPN TSLP-6
Manufacturer
Infineon Technologies
Datasheet
1.BFS_466L6_E6327.pdf
(8 pages)
Specifications of BFS 466L6 E6327
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5V, 9V
Frequency - Transition
22GHz, 14GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain
12dB ~ 17dB
Power - Max
200mW, 210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (ic) (max)
50mA, 35mA
Mounting Type
Surface Mount
Package / Case
TSLP-6-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS466L6E6327XT
SP000014240
SP000014240
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
TR1, I
TR2, I
Collector-base capacitance
TR1, V
emitter grounded
TR2, V
emitter grounded
Collector emitter capacitance
TR1, V
base grounded
TR2, V
base grounded
Emitter-base capacitance
TR1, V
collector grounded
TR2, V
collector grounded
C
C
CB
CB
CE
CE
EB
EB
= 30 mA, V
= 15 mA, V
= 0.5 V, f = 1 MHz, V
= 0.5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
CE
CE
= 3 V, f = 1 GHz
= 3 V, f = 1 GHz
BE
BE
BE
BE
CB
CB
A
= 0 ,
= 0 ,
= 0 ,
= 0 ,
= 25°C, unless otherwise specified
= 0 ,
= 0 ,
5
Symbol
f
C
C
C
T
cb
ce
eb
min.
16
11
-
-
-
-
-
-
Values
0.29
0.26
0.14
0.14
0.54
0.43
typ.
22
14
max.
0.45
BFS466L6
0.4
2007-04-26
-
-
-
-
-
-
Unit
GHz
pF