BFS 466L6 E6327 Infineon Technologies, BFS 466L6 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFS 466L6 E6327
• Description: TRANSISTOR RF TWIN NPN TSLP-6
• Manufacturer: Infineon Technologies

Specifications of BFS 466L6 E6327

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 5V, 9V
• Frequency - Transition: 22GHz, 14GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
• Gain: 12dB ~ 17dB
• Power - Max: 200mW, 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
• Current - Collector (ic) (max): 50mA, 35mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-6-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFS466L6E6327XT; SP000014240

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
TR1, I
TR2, I
Collector-base capacitance
TR1, V
emitter grounded
TR2, V
emitter grounded
Collector emitter capacitance
TR1, V
base grounded
TR2, V
base grounded
Emitter-base capacitance
TR1, V
collector grounded
TR2, V
collector grounded
C
C
CB
CB
CE
CE
EB
EB
= 30 mA, V
= 15 mA, V
= 0.5 V, f = 1 MHz, V
= 0.5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
CE
CE
= 3 V, f = 1 GHz
= 3 V, f = 1 GHz
BE
BE
BE
BE
CB
CB
A
= 0 ,
= 0 ,
= 0 ,
= 0 ,
= 25°C, unless otherwise specified
= 0 ,
= 0 ,
5
Symbol
f
C
C
C
T
cb
ce
eb
min.
16
11
-
-
-
-
-
-
Values
0.29
0.26
0.14
0.14
0.54
0.43
typ.
22
14
max.
0.45
BFS466L6
0.4
2007-04-26
-
-
-
-
-
-
Unit
GHz
pF