FFB3904 Fairchild Semiconductor, FFB3904 Datasheet

TRANSISTOR NPN 40V SC70-6

FFB3904

Manufacturer Part Number
FFB3904
Description
TRANSISTOR NPN 40V SC70-6
Manufacturer
Fairchild Semiconductor
Type
NPNr
Datasheet

Specifications of FFB3904

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
300mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Package
6SC-70
Supplier Package
SC-70
Pin Count
6
Minimum Dc Current Gain
40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Maximum Operating Frequency
250(Typ) MHz
Maximum Dc Collector Current
0.2 A
Maximum Base Emitter Saturation Voltage
0.85@1mA@10mA|0.95@5mA@50mA V
Maximum Collector Emitter Saturation Voltage
0.2@1mA@10mA|0.3@5mA@50mA V
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
6 V
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
200 mA
Power Dissipation
0.3 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
100
Frequency (max)
250MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
FFB3904
FFB3904TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FFB3904
Manufacturer:
Fairchild Semiconductor
Quantity:
140 497
Part Number:
FFB3904
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FFB3904D
Manufacturer:
FIRSTSILI
Quantity:
173
1998 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
C
Symbol
D
CEO
CBO
EBO
J
JA
Thermal Characteristics
Absolute Maximum Ratings*
, T
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
SC70-6
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
Mark: .1A
stg
C1
FFB3904
B2
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
E2
pin #1
Effective 4 Die
Each Die
Derate above 25 C
E1
Characteristic
B1
C2
Parameter
C1
T
A
FMB3904
= 25°C unless otherwise noted
SuperSOT -6
Dot denotes pin #1
E1
Mark: .1A
T
C2
A
= 25°C unless otherwise noted
pin #1
B1
FFB3904
E2
300
415
2.4
B2
Mark: MMPQ3904
SOIC-16
FMB3904
Max
E1
700
180
5.6
MMPQ3904
-55 to +150
B1
Value
E2
200
6.0
40
60
B2
pin #1
E3
MMPQ3904
B3
C1
1,000
E4
125
240
8.0
C1
B4
C2
C2
Units
C3
mA
V
V
V
C3
C
mW/ C
Units
C4
mW
C/W
C/W
C/W
C4
4

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FFB3904 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient R JA Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation FMB3904 pin #1 SuperSOT -6 Mark: MMPQ3904 Mark: .1A Dot denotes pin # 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A FFB3904 300 2.4 415 MMPQ3904 SOIC-16 pin #1 Value Units ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS Current Gain FE V Collector-Emitter ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...

Page 5

Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Current Gain 500 100 10 0 COLLECTOR CURRENT (mA) C ...

Page 6

Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 500 Duty Cycle 9.1 V FIGURE 2: Storage and ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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