FFB3904 Fairchild Semiconductor, FFB3904 Datasheet - Page 2

• Manufacturer Part Number: FFB3904
• Description: TRANSISTOR NPN 40V SC70-6
• Manufacturer: Fairchild Semiconductor
• Type: NPNr

Specifications of FFB3904

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Package: 6SC-70
• Supplier Package: SC-70
• Pin Count: 6
• Minimum Dc Current Gain: 40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.2 A
• Maximum Base Emitter Saturation Voltage: 0.85@1mA@10mA|0.95@5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.2@1mA@10mA|0.3@5mA@50mA V
• Maximum Collector Base Voltage: 60 V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6 V
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Power Dissipation: 0.3 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 100
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FFB3904; FFB3904TR

SMALL SIGNAL CHARACTERISTICS
OFF CHARACTERISTICS
V
V
V
I
I
ON CHARACTERISTICS*
h
V
V
f
C
C
Symbol
BL
CEX
T
FE
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Parameter
T
A
(MMPQ3904 only)
= 25°C unless otherwise noted
NPN Multi-Chip General Purpose Amplifier
I
I
I
V
V
I
f = 100 MHz
V
f = 140 kHz
V
f = 140 kHz
I
I
I
I
I
I
I
I
I
C
C
E
C
C
C
C
C
C
C
C
C
C
CE
CE
CB
EB
= 10 A, I
= 1.0 mA, I
= 10 A, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 10 mA, V
= 30 V, V
= 30 V, V
= 5.0 V, I
= 0.5 V, I
Test Conditions
C
E
B
B
B
B
C
B
E
EB
EB
CE
= 0
CE
CE
= 0
CE
CE
= 1.0 mA
= 5.0 mA
= 1.0 mA
= 5.0 mA
CE
= 0
= 0,
= 0,
= 0
= 20 V,
= 0
= 1.0 V
= 1.0 V
= 1.0 V
= 1.0 V
= 1.0 V
MMPQ3904
MMPQ3904
MMPQ3904
Min
0.65
100
6.0
40
60
40
30
70
50
75
60
30
Typ Max Units
250
4.0
8.0
0.85
0.95
300
0.2
0.3
50
50
(continued)
MHz
nA
nA
pF
pF
V
V
V
V
V
V
V