MMPQ2222 Fairchild Semiconductor, MMPQ2222 Datasheet

TRANSISTOR NPN DUAL 30V 16SOIC

MMPQ2222

Manufacturer Part Number
MMPQ2222
Description
TRANSISTOR NPN DUAL 30V 16SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMPQ2222

Transistor Type
4 NPN (Quad)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.6V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
1W
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Configuration
Quad
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
1 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
75
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMPQ2222
MMPQ2222TR

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©2004 Fairchild Semiconductor Corporation
NPN Multi-Chip General Purpose Amplifier
• This device is for use as a medium power amplifier and switch
• Sourced from process 19.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
V
V
V
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
f
C
C
NF
C
CBO
EBO
T
requiring collector currents up to 500mA.
FE
J
CEO
CBO
EBO
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
Symbol
, T
Symbol
STG
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current GAin Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
a
=25 C unless otherwise noted
Parameter
- Continuous
T
MMPQ2222
a
=25 C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
R
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CB
EB
S
= 10mA, I
= 10 A, I
= 10 A, I
= 10mA, V
= 150mA, V
= 150mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 100 A, V
= 1.0k , f = 1.0kHz
= 3.0V, I
= 50V, I
= 10V, I
= 0.5V, I
Test Condition
E
C
B
E
C
E
E
CE
CE
= 0
= 0
B
B
B
B
= 0
= 0
= 0, f = 100kHz
CE
= 0
CE
CE
= 0, f = 100kHz
= 15mA
= 50mA
= 15mA
= 50mA
= 10V
= 20V,
= 10V,
= 1.0V *
= 1.0V *
E1
B1
E2
- 55 ~ +155
B2
Value
E3
500
5.0
30
60
Min.
100
5.0
B3
30
60
75
50
C1
E4
C1
B4
C2
SOIC-16
Mark: MMPQ2222
C2
C3
Max.
300
0.4
1.6
1.3
2.6
4.0
2.0
50
50
20
C3
C4
Rev. A, October 2004
C4
Units
mA
V
V
V
Units
MHz
C
nA
nA
pF
pF
dB
V
V
V
V
V
V
V

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MMPQ2222 Summary of contents

Page 1

... 150mA 150mA 500mA 150mA 500mA 20mA 100MHz V = 10V 0.5V 100 1. 1.0kHz S 2. SOIC-16 Mark: MMPQ2222 Value 30 60 5.0 500 - 55 ~ +155 Min. Max 5 10V 1.0V * 100 15mA 0 50mA 1 15mA 1 50mA 2 20V, 300 100kHz 4 100kHz 20 = 10V, 2.0 CE Rev. A, October 2004 Units V ...

Page 2

... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA Effective 4 Die Each Die ©2004 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter Max. Units 1000 mW 8.0 mW/ C 125 C/W 240 C/W Rev. A, October 2004 ...

Page 3

... COLLECTOR CURRENT (mA) C Figure 3. Base-Emitter Saturation Voltage vs Collector Current 500 V = 40V 100 0 AMBIENT TEMPERATURE ( C) A Figure 5. Collector Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation Voltage vs Collector Current 0 0.3 0.2 0.1 30 100 300 1 Figure 2. Collector-Emitter Saturation Voltage 1 V 0.8 0.6 0.4 ...

Page 4

... C], CASE TEMPERATURE C Figure 7. Power Dissipation vs Ambient Temperature Common Emitter Characteristics 2 1.6 1.2 0.8 0 AMBIENT TEMPERATURE ( C) A Figure 9. Common Emitter Characteristics ©2004 Fairchild Semiconductor Corporation (Continued) Common Emitter Characteristics 100 125 150 0 Figure 8. Common Emitter Characteristics Common Emitter Characteristics 1.3 1. 1.2 1.15 ...

Page 5

... Test Circuit 0 0 ©2004 Fairchild Semiconductor Corporation 16 V 1.0 K 200ns 500 Figure 1. Saturated Turn-On Switching Time - 1 1.0 K 200ns 50 Figure 2. Saturated Turn-Off Switching Time 30 V 200 6 Rev. A, October 2004 ...

Page 6

... Package Dimensions ©2004 Fairchild Semiconductor Corporation SOIC-16 Dimensions in Millimeters Rev. A, October 2004 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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