MMPQ2222 Fairchild Semiconductor, MMPQ2222 Datasheet - Page 4

• Manufacturer Part Number: MMPQ2222
• Description: TRANSISTOR NPN DUAL 30V 16SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of MMPQ2222

• Transistor Type: 4 NPN (Quad)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 1W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Configuration: Quad
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 1 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMPQ2222; MMPQ2222TR

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
2.4
1.6
1.2
0.8
0.4
2
0
Figure 9. Common Emitter Characteristics
0
Common Emitter Characteristics
1.00
0.75
0.50
0.25
0.00
V
I = 10 mA
C
CE
0
Figure 7. Power Dissipation vs
= 10 V
T - AMBIENT TEMPERATURE ( C)
20
A
Ambient Temperature
25
T
C
[
O
C], CASE TEMPERATURE
50
40
75
60
(Continued)
h
100
re
o
80
125
h
h
h
ie
oe
fe
100
150
8
6
4
2
0
1.25
1.15
1.05
0.95
0.85
0.75
Figure 10. Common Emitter Characteristics
0
1.3
1.2
1.1
0.9
0.8
Figure 8. Common Emitter Characteristics
1
V
Common Emitter Characteristics
T
Common Emitter Characteristics
0
CE
A
= 25 C
= 10 V
10
o
5
I - COLLECTOR CURRENT (mA)
C
V
CE
h
- COLLECTOR VOLTAGE (V)
10
20
ie
I = 10 mA
T
C
A
= 25 C
15
30
o
20
h
h
h
40
oe
re
fe
25
h
h
h
h
re
oe
fe
50
ie
30
Rev. A, October 2004
60
35