MMBT5089 Fairchild Semiconductor, MMBT5089 Datasheet - Page 2

• Manufacturer Part Number: MMBT5089
• Description: TRANSISTOR NPN GP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5089

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 100µA, 5V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 4.5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 400
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 25V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 4.5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 400
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5089; MMBT5089TR

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
f
C
C
h
NF
Symbol
V
V
I
I
h
V
V
T
CBO
EBO
fe
FE
cb
eb
(BR)CEO
(BR)CBO
CE(
BE(
Electrical Characteristics
*
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2
Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p
Itf=.35 Vtf=4 Xtf=7 Rb=10)
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
on
)
)
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Noise Figure
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Parameter
TA = 25°C unless otherwise noted
I
f = 20 MHz
V
V
I
f = 1.0 kHz
I
R
f = 10 Hz to 15.7 kHz
I
I
V
V
V
V
I
I
I
I
I
C
C
C
C
C
C
C
C
C
C
CB
BE
CB
CB
EB
EB
S
= 1.0 mA, V
= 100 A, V
= 1.0 mA, I
= 100 A, I
= 100 A, V
= 1.0 mA, V
= 10 mA, V
= 10 mA, I
= 10 mA, V
= 500 A,V
= 10 k ,
= 20 V, I
= 15 V, I
= 3.0 V, I
= 4.5 V, I
= 5.0 V, I
= 0.5 V, I
Test Conditions
E
E
B
E
C
C
E
C
B
CE
CE
CE
CE
CE
CE
CE
= 0
= 0
= 1.0 mA
= 0
= 0
= 0
= 0
= 0, f = 100 kHz
= 0, f = 100 kHz
NPN General Purpose Amplifier
= 5.0 V*
= 5.0 V
= 5.0 V
= 5.0 V
= 5.0 V,
= 5.0 mA,
= 5.0 V, 5088
5088
5089
5088
5089
5088
5089
5088
5089
5088
5089
5088
5089
5089
5088
5089
Min
300
400
350
450
300
400
350
450
30
25
35
30
50
Max
1200
1400
1800
100
900
0.5
0.8
4.0
3.0
2.0
50
50
50
10
(continued)
Units
MHz
nA
nA
nA
nA
pF
pF
dB
dB
V
V
V
V
V
V
3