MMBT5089 Fairchild Semiconductor, MMBT5089 Datasheet - Page 4
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MMBT5089
Manufacturer Part Number
MMBT5089
Description
TRANSISTOR NPN GP SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5089.pdf
(7 pages)
Specifications of MMBT5089
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
400 @ 100µA, 5V
Power - Max
350mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
350 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
400
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage
30V
Emitter-base Voltage
4.5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
400
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5089
MMBT5089TR
MMBT5089TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBT5089
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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FARCHILD
Quantity:
20 000
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Part Number:
MMBT5089LT1
Manufacturer:
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Quantity:
93 000
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Part Number:
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Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
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Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
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Manufacturer:
ONSemicon
Quantity:
2 733
Part Number:
MMBT5089LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Typical Characteristics
1000
10
100
0.0001
Normalized Collector-Cutoff Current
5
4
3
2
1
0
10
8
6
4
2
0
1
0
25
C te
Input and Output Capacitance
Noise Figure vs Frequency
vs Ambient Temperature
0.001
vs Reverse Bias Voltage
T - AMBIE NT TEMPERATURE ( C)
4
50
A
REVERSE BIAS VOLTAGE (V)
f - FREQUENCY (MHz)
0.01
75
8
I
R
I = 1.0 mA,
R = 5.0 k
C
C
S
I
R
S
= 1.0 mA,
C
= 500
S
0.1
I
R
= 100 A,
C
= 10 k
S
= 200 A,
= 10 k
100
12
1
(continued)
f = 1.0 MHz
125
V
°
C ob
16
CE
10
= 5.0V
150
100
20
625
500
375
250
125
5
4
3
2
1
0
1,000
10
7
5
3
2
1
0
0.1
0
NPN General Purpose Amplifier
SOT-23
Wideband Noise Frequency
2,000
Contours of Constant Gain
Bandwidth Product (f )
25
vs Source Resistance
R
Ambient Temperature
I - COLLECTOR CURRENT (mA)
Power Dissipation vs
C
S
- SOURCE RESISTANCE ( )
V
BANDWIDTH = 15.7 kHz
5,000
TEMPERATURE ( C)
50
1
CE
TO-92
= 5.0 V
10,000
125 MHz
100 MHz
75 MHz
75
150 MHz
I
C
175 MHz
= 100 A
20,000
10
100
o
I
T
I
C
C
50,000
= 10 A
125
= 30 A
(continued)
100,000
100
150
3