MMBT5401 Fairchild Semiconductor, MMBT5401 Datasheet
MMBT5401
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... Base-Emitter Saturation Voltage BE Small Signal Characterics f Current Gain Bandwidth Product T C Output Capacitance ob N Noise Figure F * Pulse Test: Pulse Width 300 s, Duty Cycle ©2004 Fairchild Semiconductor Corporation MMBT5401 T =25 C unless otherwise noted a Parameter - Continuous T =25 C unless otherwise noted a Test Condition I = -1.0mA ...
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... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter Max. Units 350 mW 2.8 mW/ C 357 C/W Rev. B1, August 2004 ...
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... I - COLLECTOR CURRENT (mA) C Figure 3. Base-Emitter Saturation Voltage vs Collector Current 100 0 BIENT TE MPE RATURE ( C) A Figure 5. Collector-Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation 0.4 0.3 0.2 0.1 0.0 0.1 0.1 1 Figure 2. Collector-Emitter Saturation 1.0 0.8 0.6 0 0.2 10 100 0.1 Figure 4. Base-Emitter On Voltage vs ...
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... Typical Characteristics 0 REVERSE BIAS VOLTAGE(V) R Figure 7. Input and Output Capacitance vs Reverse Voltage ©2004 Fairchild Semiconductor Corporation (Continued) 700 f = 1.0 MHz 600 500 400 SOT- 300 200 C cb 100 0 10 100 0 Figure 8. Power Dissipation 100 125 o TEMPERATURE ( C) Ambient Temperature Rev. B1, August 2004 ...
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... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B1, August 2004 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ ...