MMBT5401 Fairchild Semiconductor, MMBT5401 Datasheet - Page 3

• Manufacturer Part Number: MMBT5401
• Description: TRANSISTOR PNP 150V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5401

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 150 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 150V
• Collector-base Voltage: 160V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 600mA
• Dc Current Gain (min): 50
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5401FSTR

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
200
150
100
1.0
0.8
0.6
0.4
0.2
100
50
0.1
0
1E-4
10
0.1
1
25
Figure 1. Typical Pulsed Current Gain
V
Figure 5. Collector-Cutoff Current
Figure 3. Base-Emitter Saturation
CE
V
- 40
= 5V
Voltage vs Collector Current
CB
- 40
I
C
vs Ambient Temperature
T - AM BIENT TE MPE RATURE ( C)
I
o
= 10 0V
C
50
C
- COLLECTOR CURRENT (mA)
A
1E-3
o
- COLLECTOR CURRENT (A)
vs Collector Current
C
25
125
o
1
25
C
125
o
o
C
C
75
o
C
0.01
100
10
0.1
125
°
= 10
100
150
1
Figure 6. Collector-Emitter Breakdown Voltage
0.4
0.3
0.2
0.1
0.0
1.0
0.8
0.6
0.4
0.2
220
210
200
190
180
170
0.1
0.1
0.1
with Resistance Between Emitter-Base
Figure 2. Collector-Emitter Saturation
Figure 4. Base-Emitter On Voltage vs
= 10
- 40
Voltage vs Collector Current
Between Emitter-Base
I
I
C
C
o
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
C
1
Collector Current
25
1
1
o
RESISTANCE (k )
C
125
125
o
C
10
o
C
10
10
25
100
o
V
C
- 40
CE
o
= 5V
C
Rev. B1, August 2004
100
100
1000