FJPF13009H2TU Fairchild Semiconductor, FJPF13009H2TU Datasheet

TRANSISTOR NPN 400V 12A TO-220F

FJPF13009H2TU

Manufacturer Part Number
FJPF13009H2TU
Description
TRANSISTOR NPN 400V 12A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJPF13009H2TU

Transistor Type
NPN
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 3A, 12A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
50W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
12 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
12 A
Dc Collector/base Gain Hfe Min
8
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJPF13009H2TU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
© 2007 Fairchild Semiconductor Corporation
FJPF13009 Rev. B
FJPF13009
NPN Silicon Transistor
High Voltage Switch Mode Application
• High Voltage Capability
• High Switching Speed
• Suitable for Motor Control and Switching Mode Power Supply
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
h
V
V
V
I
I
I
P
T
T
C
CP
B
FE
J
STG
CBO
CEO
EBO
C
Symbol
Classification
Classification
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature Range
h
FE1
Parameter
C
= 25°C)
T
C
1
1.Base
= 25°C unless otherwise noted
°
C.
2.Collector
8 ~ 17
H1
TO-220F
1
3.Emitter
(notes_1)
-65 ~ 150
Value
700
400
150
12
24
50
9
6
15 ~ 28
H2
December 2007
Units
www.fairchildsemi.com
°C
°C
W
V
V
V
A
A
A

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FJPF13009H2TU Summary of contents

Page 1

... NOTES_1: 1) These ratings are based on a maximum junction temperature of 150 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. h Classification FE Classification h FE1 © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B TO-220F 1 1.Base 2.Collector 3.Emitter (notes_1 25° ...

Page 2

... FJPF13009TU J13009 FJPF13009TTU J13009 FJPF13009H2TU J130092 Notes_2 : 1) The Affix “-H2” means the hFE classification. 2) The Affix “-T” means the TO220F Potting type package option. 3) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. ...

Page 3

... V [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 t F 100 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev 0.1 0.01 0.1 10 100 Figure 2. Base-Emitter Saturation Voltage 10000 1000 100 10 0.1 100 1000 ...

Page 4

... Typical Performance Characteristics 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Reverse Bias Safe Operating Area © 2007 Fairchild Semiconductor Corporation FJPF13009 Rev. B (Continued) 70 Vcc=50V, I =1A - 1mH 1000 10000 100 125 150 175 C], CASE TEMPERATURE C Figure 8. Power Derating www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ ® ...

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