FJPF13009H2TU Fairchild Semiconductor, FJPF13009H2TU Datasheet - Page 3

• Manufacturer Part Number: FJPF13009H2TU
• Description: TRANSISTOR NPN 400V 12A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FJPF13009H2TU

• Transistor Type: NPN
• Current - Collector (ic) (max): 12A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 3A, 12A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5A, 5V
• Power - Max: 50W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 12 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 12 A
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

© 2007 Fairchild Semiconductor Corporation
FJPF13009 Rev. B
Typical Performance Characteristics
1000
10000
100
1000
100
10
10
100
1
Figure 3. Collector Output Capacitance
1
0.1
0.1
0.1
Figure 1. DC current Gain
V
Figure 5. Turn Off Time
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
1
I
C
[A], COLLECTOR CURRENT
1
1
t
t
STG
F
10
10
10
100
V
I
V
C
CE
CC
=5I
=125V
= 5V
B
100
1000
100
3
Figure 6. Forward Bias Safe Operating Area
10000
Figure 2. Base-Emitter Saturation Voltage
1000
0.01
100
0.1
10
0.01
10
100
1
0.1
0.1
10
0.1
1
1
Collector-Emitter Saturation Voltage
V
Figure 4. Turn On Time
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
I
[A], COLLECTOR CURRENT
C
V
[A], COLLECTOR CURRENT
BE
(sat)
1
1
10
V
CE
(sat)
t
D
, V
BE
(off)=5V
10
10
100
t
R
V
I
C
CC
=5I
=125V
B
I
C
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= 3 I
B
100
100
1000