FJV992FMTF Fairchild Semiconductor, FJV992FMTF Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single FJV992FMTF
Manufacturer Part Number
FJV992FMTF
Description
TRANSISTOR PNP 120V 50MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of FJV992FMTF
Transistor Type
PNP
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
0.3 W
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
ON/安森美
©2004 Fairchild Semiconductor Corporation
Audio Frequency Low Noise Amplifier
• Complement to FJV1845
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
h
V
V
f
C
NV
C
EBO
T
FE2
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(on)
(sat)
Classification
Classification
h
FE2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
200 ~ 400
T
a
=25 C unless otherwise noted
P
T
Parameter
a
=25 C unless otherwise noted
Marking
FJV992
2J P
I
I
I
V
V
V
I
V
V
V
V
R
f = 10Hz to 1.0KHz
C
C
E
C
EB
CE
CE
CE
CE
CB
CE
G
= -10 A, I
= -100 A, I
= -1mA, I
= -10mA, I
=100KW, G
= -6V, I
= -6V, I
= -6V, I
= -6V, I
= -6V, I
= -30V, I
= -5.0V, I
Test Condition
h
FE
C
300 ~ 600
B
C
C
C
C
C
Classification
=0
=0
= -0.1mA
= -1mA
B
= -1mA
= -1mA
E
=0
C
E
= -1mA
=0, f=1MHz
V
= 0
= -1.0mA,
F
= 80dB,
1. Base 2. Emitter 3. Collector
-55 ~ 150
Ratings
-0.55
-120
-120
-120
-120
Min.
300
150
150
200
3
-50
50
-5
-5
400 ~ 800
Max.
-0.65
-300
1
800
-30
40
3
E
SOT-23
Units
Rev. C, August 2004
mW
2
mA
V
V
V
C
C
Units
MHz
mV
mV
nA
pF
V
V
V
V
Related parts for FJV992FMTF
FJV992FMTF Summary of contents
... FE2 V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob NV Noise Voltage h Classification FE2 Classification h FE2 ©2004 Fairchild Semiconductor Corporation FJV992 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -1mA - ...
... Figure 1. Static Characteristic 1000 0 Ta=125 C 0 Ta= Ta=-25 C 100 10 -1E-3 -0.01 I [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 1 0 Ta=- Ta= Ta=125 C 0.1 1E-3 0.01 I [mA], COLLECTOR CURRENT C Figure 5. Base-Emitter Saturation Voltage ©2004 Fairchild Semiconductor Corporation - -60 -80 -100 =-6V CE -0.1 Ta=-25 -0 ...
... V [V], COLLECTOR-BASE VOLTAGE CB Figure 7. Collector Output Capacitance 600 500 400 300 200 100 100 o Ta[ C], AMBIENT TEMPERATURE Figure 9. Power Derating ©2004 Fairchild Semiconductor Corporation (Continued) 1000 1MHz 100 10 1 -100 -1000 0.1 Figure 8. Current Gain Bandwidth Product 125 150 175 V = -6V CE ...
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2004 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. C, August 2004 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...
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