BCW71 Fairchild Semiconductor, BCW71 Datasheet
BCW71
Manufacturer Part Number
BCW71
Description
TRANSISTOR NPN 45V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCW71_ND87Z.pdf
(4 pages)
Specifications of BCW71
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
250mV @ 500µA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
330MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Frequency
330 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
110
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
110
Frequency (max)
330MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCW71
Manufacturer:
Fairchild Semiconductor
Quantity:
30 700
Part Number:
BCW71
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BCW71,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1997 Fairchild Semiconductor Corporation
V
V
V
I
T
P
R
Symbol
Symbol
C
J
CEO
CES
EBO
D
NPN General Purpose Amplifier
, T
*
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
This device is designed for general purpose amplifier
applications at collector currents to 300 mA. Sourced from
Process 10.
Thermal Characteristics
JA
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Derate above 25 C
SOT-23
Mark: K1
BCW71
C
Characteristic
B
Parameter
E
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
*BCW71
Max
350
357
2.8
-55 to +150
Value
500
5.0
45
50
Units
mW/ C
Units
mA
mW
V
V
V
C/W
C
3
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BCW71 Summary of contents
Page 1
... Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 500 mA -55 to +150 C Max Units *BCW71 350 mW 2.8 mW/ C 357 C/W 3 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V CE( sat ) Base-Emitter ...
Page 3
Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current °C 0.8 25 °C 0.6 125 °C 0.4 0.2 0 COLLECTOR CURRENT (mA) C Collector-Cutoff Current vs Ambient Temperature 60V CB 1 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...