BSR14 Fairchild Semiconductor, BSR14 Datasheet
BSR14
Manufacturer Part Number
BSR14
Description
TRANS NPN 40V 0.8A SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSR14.pdf
(3 pages)
Specifications of BSR14
Transistor Type
NPN
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.8 A
Maximum Dc Collector Current
0.8 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSR14TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSR14
Manufacturer:
FAIRCHIL
Quantity:
2 529
Company:
Part Number:
BSR14
Manufacturer:
WINBOND
Quantity:
7 402
Part Number:
BSR14
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSR14,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1997 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
JA
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Process
19. See BCW65C for characteristics.
Absolute Maximum Ratings*
, T
Thermal Characteristics
*
NPN General Purpose Amplifier
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
stg
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
SOT-23
Mark: U8
Derate above 25 C
C
BSR14
Characteristic
B
Parameter
E
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
*BSR14
Max
350
357
2.8
-55 to +150
Value
800
6.0
40
75
Units
Units
mW/ C
mA
mW
C/W
V
V
V
C
3
Related parts for BSR14
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BSR14 Summary of contents
Page 1
... Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 6.0 V 800 mA -55 to +150 C Max Units *BSR14 350 mW 2.8 mW/ C 357 C/W 3 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Collector-Cutoff Current CEX I Reverse Base Current BEX I Emitter-Cutoff Current EBO ON CHARACTERISTICS ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...