BSR14 Fairchild Semiconductor, BSR14 Datasheet - Page 2

• Manufacturer Part Number: BSR14
• Description: TRANS NPN 40V 0.8A SOT23
• Manufacturer: Fairchild Semiconductor

Specifications of BSR14

• Transistor Type: NPN
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSR14TR

ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
OFF CHARACTERISTICS
h
V
V
Symbol
f
C
h
h
h
t
t
t
t
V
V
V
I
I
I
I
T
d
r
s
f
CBO
CEX
BEX
EBO
FE
CE(
BE(
ie
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CB
Electrical Characteristics
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
sat
sat
)
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Reverse Base Current
Emitter-Cutoff Current
Current Gain - Bandwidth Product
Collector-Base Capacitance
Input Impedance
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
I
f = 100 mHz
V
V
V
V
V
I
V
I
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
B1
CB
CB
CE
CE
EB
CB
CE
CE
CE
CC
CC
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 10 A, I
= 10 A, I
= 10 A, I
= 20 mA, V
= 150 mA, I
= I
= 10V, I
=10V,I
=10V,I
=10V,I
= 60 V
= 60 V, T
= 60 V, V
= 60 V, V
= 3.0 V, I
= 30 V, V
= 30 V, I
Test Conditions
B2
= 15 mA
C
C
C
=1.0 mA,f=1.0 kHz
=1.0 mA,f=1.0 kHz
=1.0 mA,f=1.0 kHz
E
C
B
E
CE
C
B
B
B
B
= 0, f = 1.0 MHz
C
A
CE
CE
EB
EB
CE
= 0
= 0
= 0
BE(OFF)
CE
CE
CE
B1
= 150 mA,
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 150 C
= 0
NPN General Purpose Amplifier
= 10 V
= 10 V
= 10 V
= 3.0 V
= 3.0 V
= 20,
= 15 mA
= 10 V
= 1.0 V
= 10 V
= 0.5 V,
Min
100
300
0.6
6.0
2.0
35
50
75
50
40
75
40
50
5
Max
300
300
225
0.3
1.0
1.2
2.0
8.0
8.0
10
10
10
20
15
35
10
25
60
(continued)
Units
MHz
nA
nA
nA
nA
k
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
A
S