BSS64 Fairchild Semiconductor, BSS64 Datasheet
BSS64
Manufacturer Part Number
BSS64
Description
TRANSISTOR NPN 80V SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSS64.pdf
(5 pages)
Specifications of BSS64
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
200mV @ 15mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 10mA, 1V
Power - Max
350mW
Frequency - Transition
60MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
200 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
60 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
120V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
20
Frequency (max)
60MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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Part Number
Manufacturer
Quantity
Price
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Part Number:
BSS64
Manufacturer:
SEMIKRON
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6 357
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Part Number:
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1997 Fairchild Semiconductor Corporation
P
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JA
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings*
, T
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
*
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
stg
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
SOT-23
Mark: U3
Derate above 25 C
BSS64
C
Characteristic
B
Parameter
E
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
*BSS64
Max
350
357
2.8
-55 to +150
Value
120
200
5.0
80
Units
Units
mW/ C
mA
mW
C/W
V
V
V
C
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BSS64 Summary of contents
Page 1
... Derate above Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.5 mm. 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 80 V 120 V 5.0 V 200 mA -55 to +150 C Max Units *BSS64 350 mW 2.8 mW/ C 357 C/W ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V ...
Page 3
Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current ° C 0.8 25 °C 0.6 125 ° C 0.4 0 COLLECTOR CURRE NT (mA) C Collector-Cutoff Current vs. Ambient Temperature 50 ...
Page 4
Typical Characteristics 350 300 250 200 150 100 NPN General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature SOT- 100 125 o TEMPERATURE ( C) (continued) 150 3 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...