BSS64 Fairchild Semiconductor, BSS64 Datasheet - Page 2

• Manufacturer Part Number: BSS64
• Description: TRANSISTOR NPN 80V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS64

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 15mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 60MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 200 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 120V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 20
• Frequency (max): 60MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

V
V
V
I
I
h
V
V
f
C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Symbol
CBO
EBO
T
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
ob
Typical Characteristics
Electrical Characteristics
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
sat
sat
250
200
150
100
)
50
)
0
0.1
V
Typical Pulsed Current Gain
C E
0.2
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
= 5V
vs Collector Current
I - COLLECTOR CURRENT (mA)
C
0.5
1
Parameter
25 °C
2
125 °C
- 40 °C
5
10
20
TA = 25°C unless otherwise noted
50
100
I
I
I
V
V
V
I
I
I
I
I
f = 35 MHz
V
C
C
E
C
C
C
C
C
CB
CB
EB
CB
= 4.0 mA, I
= 100 A, I
= 100 A, I
= 10 mA, V
= 4.0 mA, I
= 50 mA, I
= 4.0 mA, I
= 4.0 mA, V
= 90 V, I
= 90 V, I
= 5.0 V, I
= 10 V, f = 1.0 MHz
Test Conditions
E
E
B
0.5
0.4
0.3
0.2
0.1
B
C
B
B
E
C
CE
= 0
= 0, T
= 15 mA
CE
0
= 0
= 0
= 400 A
= 400 A
= 0
= 0
1
= 1.0 V
NPN General Purpose Amplifier
= 10,
Voltage vs Collector Current
Collector-Emitter Saturation
A
= 150 C
= 10
I - COLLECTOR CURRE NT (mA)
C
125 ° C
10
Min
120
5.0
80
20
60
Max
25 °C
- 40 ° C
0.15
200
0.1
0.2
1.2
5.0
50
100
(continued)
Units
MHz
200
nA
pF
V
V
V
V
V
V
A
A
3