MMBTA06 Fairchild Semiconductor, MMBTA06 Datasheet - Page 2

• Manufacturer Part Number: MMBTA06
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA06

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA06FSTR

MPSA06 / MMBTA06 / PZTA06 Rev. B0
© 2011 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
On Characteristics
Small Signal Characteristics
Symbol
V
V
V
V
(BR)CEO
(BR)EBO
CE(sat)
I
I
BE(on)
h
CEO
CBO
f
FE
T
Collector-Emitter Breakdown Voltage* I
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Parameter
T
a
= 25°C unless otherwise noted
I
V
V
I
I
I
I
f = 100MHz
I
C
E
C
C
C
C
C
CE
CB
2
= 1.0mA, I
= 100μA, I
= 10mA, V
= 100mA, V
= 100mA, I
= 100mA, V
= 10mA, V
Test Condition
= 60V, I
= 80V, I
B
E
C
B
CE
CE
B
= 0
= 0
CE
CE
= 0
= 0
= 10mA
= 1.0V
= 2.0V,
= 1.0V
= 1.0V
Min.
100
100
100
4.0
80
Max.
0.25
0.1
0.1
1.2
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Units
MHz
μA
μA
V
V
V
V