MMBTA06 Fairchild Semiconductor, MMBTA06 Datasheet - Page 4

• Manufacturer Part Number: MMBTA06
• Description: TRANSISTOR GP NPN AMP SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTA06

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA06FSTR

MPSA06 / MMBTA06 / PZTA06 Rev. B0
© 2011 Fairchild Semiconductor Corporation
Typical Performance Characteristics
Figure 7. Collector-Emitter Breakdown Voltage
400
350
300
250
200
150
100
117
116
115
114
113
112
111
0.1
1
with Resistance Between Emitter-Base
Collector-Emitter Breakdown
V
CE
Figure 9. Gain Bandwidth Product
Gain Bandwidth Product
Voltage with Resistance
= 5V
Between Emitter-Base
I
vs Collector Current
C
- COLLECTOR CURRENT (mA)
1
vs Collector Current
RESISTANCE (k )
10
10
20
Ω Ω
50
100
100
1000
(continued)
4
0.75
0.25
100
0.1
10
0.5
1
0.1
1
0
0
Figure 8. Input and Output Capacitance
Input and Output Capacitance
SOT-23
TO-92
Figure 10. Power Dissipation vs
25
V
Ambient Temperature
Power Dissipation vs
vs Reverse Voltage
CE
Ambient Temperature
- COLLECTOR VOLTAGE (V)
vs Reverse Voltage
TEMPERATURE ( C)
50
1
SOT-223
75
100
o
10
C
ob
C
ib
f = 1.0 MHz
125
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150
100