NZT660A Fairchild Semiconductor, NZT660A Datasheet
NZT660A
Specifications of NZT660A
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NZT660A Summary of contents
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... CBO BV Emitter-Base Breakdown Voltage EBO I Collector-Base Cutoff Current CBO I Emitter-Base Cutoff Current EBO On Characteristics * h DC Current Gain FE ©2005 Fairchild Semiconductor Corporation NZT660/NZT660A Rev SOT-223 1. Base 2. Collector 3. Emitter T =25°C unless otherwise noted a Parameter NZT660 - Continuous - 55 ~ +150 T = 25°C unless otherwise noted ...
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... Small Signal Characteristics C Output Capacitance obo f Transition Frequency T * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Ambient θJA NZT660/NZT660A Rev 25°C unless otherwise noted (Continued) a Test Conditions 100mA 3A 300mA ...
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... I - COLLECTOR CURRENT (A) C NZT660/NZT660A Rev. C3 Figure 2. Base-Emitter On Voltage 1 2.0V ce 1.4 1.2 1 0.8 0.6 0.4 0.2 0.0001 1 10 Figure 4. Input/Output Capacitance 400 350 300 125°C 250 25° ...
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... Mechanical Dimensions (0.95) NZT660/NZT660A Rev. C3 SOT-223 3.00 ±0.10 MAX1.80 2.30 TYP 0.70 ±0.10 (0.95) ±0.25 0.25 4.60 ±0.20 6.50 4 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete NZT660/NZT660A Rev. C3 IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...