NZT660A Fairchild Semiconductor, NZT660A Datasheet - Page 2

• Manufacturer Part Number: NZT660A
• Description: TRANSISTOR PNP GP 60V SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of NZT660A

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 2W
• Frequency - Transition: 75MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 250
• Maximum Operating Frequency: 75 MHz
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NZT660/NZT660A Rev. C3
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics
V
V
V
Small Signal Characteristics
C
f
P
R
Symbol
T
CE(sat)
BE(sat)
BE(on)
D
obo
θJA
Symbol
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Parameter
T
a
Parameter
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted (Continued)
I
I
I
I
V
I
C
C
C
C
C
CB
= 1A, I
= 3A, I
= 1A, I
= 1A, V
= 100mA, V
= 10V, I
Test Conditions
B
B
B
CE
= 100mA
= 300mA
= 100mA
2
E
= 2V
= 0, f = 1MHz
CE
= 5V, f = 100MHz
NZT660/NZT660A
NZT660A
NZT660
62.5
2
Min.
75
Typ.
Max.
1.25
300
550
500
45
Units
1
°C/W
www.fairchildsemi.com
W
Units
MHz
mV
mV
mV
pF
V
V