BFN 19 E6327 Infineon Technologies, BFN 19 E6327 Datasheet
BFN 19 E6327
Specifications of BFN 19 E6327
SP000010998
Related parts for BFN 19 E6327
BFN 19 E6327 Summary of contents
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PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN18 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BFN19 Maximum Ratings Parameter ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base breakdown voltage I = 100 µ ...
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DC current gain BFN 17/ Collector current I ...
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Transition frequency BFN 17/ MHz Total power dissipation P 1.2 W 0.8 0.6 0.4 0 ...
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Package Outline 1) Ejector pin markings possible Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Package SOT89 4.5 ±0.1 B 1.5 45˚ 0.25 ±0.05 0. 1.5 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...