BFN 19 E6327 Infineon Technologies, BFN 19 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFN 19 E6327
• Description: TRANSISTOR RF PNP 300V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BFN 19 E6327

• Package / Case: SOT-89
• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 30mA, 10V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 300 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFN19E6327XT; SP000010998

Transition frequency f
V
Total power dissipation P
f
CE
T
MHz
10
10
10
W
= 10 V
1.2
0.8
0.6
0.4
0.2
5
3
2
1
0
10
0
BFN 17/19
0
15
30
5
45
10
1
60
T
75
=
5
90 105 120
tot
( I
10
= ( T
C
2
)
mA
C
EHP00590
S
)
T
°C
5
S
10
150
3
4
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
90
70
60
50
40
30
20
10
10
10
10
10
0
5
5
5
0
/ P
3
2
1
0
10
BFN 17/19
totDC
-6
10
4
=
-5
10
( t
8
p
CEB
D
-4
)
=
T
t
10
p
12
-3
t
p
10
eb
T
-2
16
cb
2007-03-29
= ( V
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
= ( V
t
BFN19
s
p
EHP00588
V
V
EB
CB
CCB
CB
)
10
(V
22
)
EB
0
)