BDP 949 E6327 Infineon Technologies, BDP 949 E6327 Datasheet - Page 2

• Manufacturer Part Number: BDP 949 E6327
• Description: TRANSISTOR NPN AF 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BDP 949 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 60 V
• Continuous Collector Current: 3 A
• Power Dissipation: 5 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BDP 949 E6327; BDP949E6327INTR; BDP949E6327XT; SP000010932

1
Thermal Resistance
Parameter
Junction - soldering point
Maximum Ratings
Parameter
Collector-emitter voltage
BDP947
BDP949
BDP953
Collector-base voltage
BDP947
BDP949
BDP953
Emitter-base voltage
Collector current
Peak collector current, t
Base current
Peak base current, t
Total power dissipation-
T
Junction temperature
Storage temperature
Pb-containing package may be available upon special request
S
≤ 100 °C
p
≤ 10 ms
p
1)
≤ 10 ms
2
Symbol
R
Symbol
V
V
V
I
I
I
I
P
T
T
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
BDP947, BDP949, BDP953
-65 ... 150
Value
Value
≤ 10
100
120
200
500
150
45
60
45
60
5
3
5
5
2009-05-28
Unit
V
A
mA
W
°C
Unit
K/W