BDP 949 E6327 Infineon Technologies, BDP 949 E6327 Datasheet - Page 6

• Manufacturer Part Number: BDP 949 E6327
• Description: TRANSISTOR NPN AF 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BDP 949 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 100 MHz
• Collector- Emitter Voltage Vceo Max: 60 V
• Continuous Collector Current: 3 A
• Power Dissipation: 5 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BDP 949 E6327; BDP949E6327INTR; BDP949E6327XT; SP000010932

Permissible Pulse Load
P
totmax
10
10
10
10
-
3
2
1
0
10
/ P
-6
totDC
10
-5
= ƒ ( t
10
p
-4
)
10
-3
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-2
s
t
p
10
0
6
BDP947, BDP949, BDP953
2009-05-28