BCX70KE6327XT Infineon Technologies, BCX70KE6327XT Datasheet - Page 2

• Manufacturer Part Number: BCX70KE6327XT
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BCX70KE6327XT

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 100@10uA@5V|380@2mA@5V|100@50mA@1V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.85@0.25mA@10mA|1.05@1.25mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.25mA@10mA|0.55@1.25mA@50mA V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 6 V
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 100
• Power Dissipation: 330mW
• Frequency (max): 250MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Maximum Ratings
Parameter
Collector-emitter voltage
BCW60, ...60FF
BCX70
Collector-base voltage
BCW60, ...60FF
BCX70
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
S
71 °C
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
I
I
I
P
T
T
Symbol
R
C
CM
BM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
Value
100
200
200
330
150
32
45
32
45
240
6
BCW60, BCX70
2007-04-20
Unit
V
mA
mW
°C
Unit
K/W