BCX70KE6327XT Infineon Technologies, BCX70KE6327XT Datasheet - Page 7

• Manufacturer Part Number: BCX70KE6327XT
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
• Manufacturer: Infineon Technologies
• Type: NPNr

Specifications of BCX70KE6327XT

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 100@10uA@5V|380@2mA@5V|100@50mA@1V
• Maximum Operating Frequency: 250(Typ) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.85@0.25mA@10mA|1.05@1.25mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.25mA@10mA|0.55@1.25mA@50mA V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 6 V
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 100
• Power Dissipation: 330mW
• Frequency (max): 250MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
CBO
CB
10
nA
pF
10
10
10
10
10
= V
12
10
-1
9
8
7
6
5
4
3
2
1
0
4
3
2
1
0
0
0
BCW 60/BCX 70
CEmax
4
50
8
CEB
max
typ
12
CBO
100
eb
=
cb
16
= (V
T
= (V
(T
A
˚C
EHP00335
V
A
V
EB
)
CB
CB
CCB
)
150
(V
22
)
EB
)
7
Transition frequency f
V
Total power dissipation P
f
CE
T
mW
MHz
10
10
10
360
300
270
240
210
180
150
120
= parameter in V, f = 2 GHz
5
90
60
30
10
0
3
2
1
0
BCW 60/BCX 70
-1
15
30
45
10
0
60
T
75
BCW60, BCX70
=
90 105 120
tot
10
(I
= (T
C
1
)
2007-04-20
mA
S
EHP00330
C
)
T
°C
S
10
150
2