BCX70KE6327XT Infineon Technologies, BCX70KE6327XT Datasheet - Page 7
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BCX70KE6327XT
Manufacturer Part Number
BCX70KE6327XT
Description
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R
Manufacturer
Infineon Technologies
Type
NPNr
Datasheet
1.BCX70KE6327XT.pdf
(11 pages)
Specifications of BCX70KE6327XT
Package
3SOT-23
Supplier Package
SOT-23
Pin Count
3
Minimum Dc Current Gain
100@10uA@5V|380@2mA@5V|100@50mA@1V
Maximum Operating Frequency
250(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.85@0.25mA@10mA|1.05@1.25mA@50mA V
Maximum Collector Emitter Saturation Voltage
0.25@0.25mA@10mA|0.55@1.25mA@50mA V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
6 V
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
45V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
100
Power Dissipation
330mW
Frequency (max)
250MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
CBO
CB
10
nA
pF
10
10
10
10
10
= V
12
10
-1
9
8
7
6
5
4
3
2
1
0
4
3
2
1
0
0
0
BCW 60/BCX 70
CEmax
4
50
8
CEB
max
typ
12
CBO
100
eb
=
cb
16
= (V
T
= (V
(T
A
˚C
EHP00335
V
A
V
EB
)
CB
CB
CCB
)
150
(V
22
)
EB
)
7
Transition frequency f
V
Total power dissipation P
f
CE
T
mW
MHz
10
10
10
360
300
270
240
210
180
150
120
= parameter in V, f = 2 GHz
5
90
60
30
10
0
3
2
1
0
BCW 60/BCX 70
-1
15
30
45
10
0
60
T
75
BCW60, BCX70
=
90 105 120
tot
10
(I
= (T
C
1
)
2007-04-20
mA
S
EHP00330
C
)
T
°C
S
10
150
2