MT47H64M16HR-25E:H Micron Technology Inc, MT47H64M16HR-25E:H Datasheet - Page 116

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MT47H64M16HR-25E:H

Manufacturer Part Number
MT47H64M16HR-25E:H
Description
64MX16 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Series
-r
Datasheet

Specifications of MT47H64M16HR-25E:H

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
160mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Lead Free Status / Rohs Status
Compliant

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SELF REFRESH
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
The SELF REFRESH command is initiated when CKE is LOW. The differential clock
should remain stable and meet
refresh mode. The procedure for exiting self refresh requires a sequence of commands.
First, the differential clock must be stable and meet
prior to CKE going back to HIGH. Once CKE is HIGH (
with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com-
mands issued for
ments is used to apply NOP or DESELECT commands for 200 clock cycles before
applying any other command.
t
XSNR. A simple algorithm for meeting both refresh and DLL require-
116
t
CKE specifications at least 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
t
CK specifications at least 1 ×
t
CKE [MIN] has been satisfied
© 2004 Micron Technology, Inc. All rights reserved.
t
CK after entering self
SELF REFRESH
t
CK

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