MT47H64M16HR-25E:H Micron Technology Inc, MT47H64M16HR-25E:H Datasheet - Page 32

• Manufacturer Part Number: MT47H64M16HR-25E:H
• Description: 64MX16 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr
• Series: -r

Specifications of MT47H64M16HR-25E:H

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 160mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Lead Free Status / Rohs Status: Compliant

Table 11: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Parameter/Condition
Operating burst read current: All banks
open, continuous burst reads, I
4, CL = CL (I
t
is HIGH between valid commands; Address bus
inputs are switching; Data bus inputs are switch-
ing
Burst refresh current:
FRESH command at every
CKE is HIGH, CS# is HIGH between valid com-
mands; Other control and address bus inputs
are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤
0.2V; Other control and address bus inputs are
floating; Data bus inputs are floating
Operating bank interleave read
current: All bank interleaving reads, I
0mA; BL = 4, CL = CL (I
t
t
HIGH between valid commands; Address bus in-
puts are stable during deselects; Data bus inputs
are switching; See on page for details
RAS MAX (I
CK (I
RRD (I
DD
DD
);
),
t
CK =
t
DD
RCD =
DD
), AL = 0;
),
t
CK (I
t
RP =
t
RCD (I
DD
DD
Notes:
t
DD
RP (I
Specifications and Conditions (Die Revision H) (Continued)
),
t
CK =
t
), AL =
t
DD
CK =
RC =
t
RFC (I
DD
); CKE is HIGH, CS# is
t
); CKE is HIGH, CS#
CK (I
t
t
1. I
2. V
3. I
4. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and
5. Definitions for I
6. I
7. The following I
OUT
CK (I
RC (I
t
DD
RCD (I
UDQS#. I
tion devices when operated outside of the range 0°C ≤ T
LOW
HIGH
Stable
Floating
Switching Inputs changing between HIGH and LOW every other clock cycle (once per
Switching Inputs changing between HIGH and LOW every other data transfer (once
When
T
DD
) interval;
DD
DD
DD1
= 0mA; BL =
DD
C
DD
DD
),
≤ 0°C
specifications are tested after the device is properly initialized. 0°C ≤ T
parameters are specified with ODT disabled.
, I
); RE-
OUT
),
= +1.8V ±0.1V, V
DD
t
RAS =
DD4R
t
) - 1 ×
RRD =
=
DD
, and I
I
ed by 2%; and I
values must be met with all combinations of EMR bits 10 and 11.
DD2P
V
V
Inputs stable at a HIGH or LOW level
Inputs at V
two clocks) for address and control signals
per clock) for DQ signals, not including masks or strobes
IN
IN
DD
DD
DD7
≤ V
≥ V
and I
Symbol
values must be derated (I
I
conditions:
I
I
I
I
DD4R
DD6L
IL(AC)max
IH(AC)min
DD5
DD6
DD7
require A12 in EMR to be enabled during testing.
DDQ
DD3P(SLOW)
REF
= +1.8V ±0.1V, V
32
= V
DD6
Configuration
Electrical Specifications – I
DDQ
x4, x8, x16
and I
must be derated by 4%; I
x4, x8
x4, x8
x4, x8
/2
x16
x16
x16
DD7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
must be derated by 7%
DDL
DD
1Gb: x4, x8, x16 DDR2 SDRAM
= +1.8V ±0.1V, V
limits increase) on IT-option and AT-op-
-187E
150
190
180
210
250
300
7
5
C
DD4R
≤ 85°C:
-25E/
120
150
145
150
210
260
-25
© 2004 Micron Technology, Inc. All rights reserved.
7
5
REF
and I
= V
DD5W
DD
DDQ
-3E/
110
125
140
145
185
230
Parameters
/2.
must be derat-
-3
7
5
C
≤ +85°C.
Units
mA
mA
mA
mA