KC80526LY400128 Intel, KC80526LY400128 Datasheet - Page 32

• Manufacturer Part Number: KC80526LY400128
• Manufacturer: Intel

Specifications of KC80526LY400128

• Operating Temperature (min): 0C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

4.7.4.1
In Figure 8, PWR is the voltage generated by applying the
AC Adaptor or Battery. M1 is a low R
MOSFET such as a Siliconix* SI4435DY. When the voltage-
On PWR is applied and increased to over 4.75 volts, the
The manufacturer’s Vgs_max specification of 20 volts must
never be exceeded. However, Vgs_max must be high
enough to keep the RDS (On) of the device as low as
Maximum current during the voltage ramping is:
As shown in the circuit in Figure 8: t_delay = 5.53 ms; t_tran = 14.0 ms; and I_max = 146 mA.
Values shown are for reference only.
Slew-rate Control: Circuit Description
NOTE:
DS
(on) P-Channel
t_ramp
t_delay
Figure 8. Overcurrent Protection Circuit
Vgs_max
R2 C9 ln 1
I
R2 C9 ln 1
.
.
Ctotal
R16 R2
.
.
R16
.
t_ramp
Vpwr
Vgs_max
.
Vpwr Vgs_max
UNDER_VOLTAGE_LOCKOUT circuit allows R4 to pull up
the gate of M3 to start a turn-on sequence. M3 pulls its drain
toward ground, forcing current to flow through R2. M1 will
not start to source any current until after t_delay with t_delay
defined as:
possible. After the initial t_delay, M1 will begin to source
current and V_DC will start to ramp up. The ramp up time,
t_ramp, is defined as:
Vsat
Intel Celeron
Vpwr
Vt
At 400 MHz, 366 MHz, 333 MHz, and 300 MHz
t_delay
Processor Mobile Module MMC-1
32