BAR90081LSE6327XT Infineon Technologies, BAR90081LSE6327XT Datasheet

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Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω ...

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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage 100 mA ...

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Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...

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Diode capacitance Parameter 0.5 pF 0.4 0.35 1 MHz 0.3 100 MHz 1 GHz 1.8 GHz 0.25 0.2 0.15 0 ƒ (I Forward resistance r f ...

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Forward current 120 mA 100 Permissible Puls Load R thJS 0,5 0,2 ...

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Insertion loss | Parameter F Single BAR90 diode in series configuration Ω -0.1 -0.15 -0.2 10mA -0.25 3mA 1mA 0.5mA -0.3 -0.35 -0 ...

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Package TSSLP-8-1 7 BAR90-081LS 2009-01-26 ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...